Each generational leap in semiconductor materials has driven transformative leaps in human technological civilization. From silicon, which laid the foundation for the information society, to gallium arsenide, which illuminated the era of communications, to silicon carbide and gallium nitride enabling the green energy revolution, and the emerging star for ultra-high-voltage applications—gallium oxide—every breakthrough in semiconductor materials has led the innovation of the entire electronics industry.
The 1st Generation: Laying the Cornerstone of the Information Age
The first generation of semiconductor materials is represented by Silicon (Si) and Germanium (Ge). Germanium, the first to be commercialized, successfully gave birth to the earliest transistors but was gradually replaced by silicon due to performance limitations, though it remains essential in niche fields like infrared optics and specific solar cells. Silicon, with its 1.12eV bandgap, excellent oxidation properties, and abundant natural reserves, became the unrivaled choice for the integrated circuit industry. To this day, over 95% of global semiconductor devices are still manufactured based on silicon.
The maturity of silicon-based semiconductor technology fueled the booming development of computers, communications, and consumer electronics. However, its physical properties are gradually approaching their theoretical limits, and performance bottlenecks are becoming increasingly evident in high-voltage, high-frequency, and high-temperature applications.
The 2nd Generation: Ushering in the Optoelectronic Era
The second generation of semiconductors, represented by compound semiconductors like Gallium Arsenide (GaAs) and Indium Phosphide (InP), addressed silicon's shortcomings in optoelectronic properties. These materials feature a direct bandgap structure and electron mobility far exceeding that of silicon, making them particularly suitable for manufacturing high-frequency devices and photoelectric devices.
Gallium Arsenide's electron mobility is six times that of silicon, making it excel in microwave and RF fields, widely used in equipment like satellite communications and mobile communication base stations. Indium Phosphide plays a vital role in optical communications, serving as a key material for manufacturing lasers and detectors.
However, second-generation semiconductor materials also face challenges such as high manufacturing costs, limited wafer sizes, and the toxicity of some materials, which restrict their wider application.
The 3rd Generation: Powering the Green Energy Revolution
The third generation of semiconductor materials, primarily Silicon Carbide (SiC) and Gallium Nitride (GaN), are known as "green energy semiconductors" due to their wide-bandgap characteristics. Silicon Carbide has a bandgap of 3.2eV, a breakdown electric field strength 10 times that of silicon, and a thermal conductivity 3 times that of silicon. These properties make it particularly suitable for manufacturing high-voltage, high-power devices.
In the field of new energy vehicles, SiC power devices can significantly improve the efficiency of motor controllers and extend driving range. In photovoltaic power generation and smart grids, SiC devices can reduce energy conversion losses and improve system reliability.
Gallium Nitride, leveraging its high electron saturation velocity, shines in the RF field. GaN devices are found in 5G communication base station power amplifiers and high-speed power supplies for data centers.
The 4th Generation: Pioneering a New Era of Extreme Performance
The fourth generation of semiconductors, represented by ultra-wide-bandgap (UWBG) materials like Gallium Oxide (Ga₂O₃) and diamond, are pushing semiconductor material performance to new heights. Gallium Oxide has a bandgap of 4.8-4.9eV, and its theoretical Baliga's Figure of Merit is 10 times that of Silicon Carbide, showing immense potential in the ultra-high-power device.
Diamond semiconductors possess the highest thermal conductivity of all semiconductor materials, coupled with extremely high breakdown field strength and carrier mobility, making them an ideal choice for electronic devices in extreme environments. However, the preparation technology for diamond semiconductors still faces significant challenges, and large-scale commercialization remains a distant goal.
Comparison of Key Material Properties:
Breakthroughs in Precision Processing Technology
Each innovation in semiconductor materials presents new challenges for their processing and manufacturing technologies. From relatively soft silicon to extremely hard silicon carbide, and then to relatively brittle gallium oxide, each generation of materials requires corresponding precision processing technology support.
Siplus semiconductor's integrated slicing, grinding, and polishing solutions offer excellent cross-generational material compatibility, capable of stably processing the full spectrum of semiconductor materials from first-generation silicon to fourth-generation gallium oxide. Through unique process optimization, we achieve excellent surface quality and processing consistency for various materials, providing a solid guarantee for the industry's rapid development.
The history of semiconductor material development is a remarkable epic of humanity constantly breaking physical limits and exploring the unknown. From the cornerstone of the silicon era, to the pioneering work with compound semiconductors, and the revolution of wide-bandgap materials, each generation of materials has achieved breakthroughs in specific performance dimensions, collectively building the diverse ecosystem of the modern electronics industry. Looking ahead, with the continuous emergence of new materials and processes, semiconductor technology will undoubtedly shine in more fields. The synchronous development of precision manufacturing technology provides crucial support for this ongoing technological transformation, helping innovative materials move from the laboratory to industrialization, and jointly opening a new chapter in information technology.