6" Single-Side Polishing Machine

This equipment is designed for a Φ485mm ceramic disc, performing polishing on wafers attached to it. It is suitable for various wafer substrate materials including 4-8 inch Si, SiC, GaAs, and Ge wafers. The system features four actively driven polishing heads, combined with innovative multi-zone pressure application, precise temperature control, and pressure control systems, enabling highly efficient, high-flatness, and low-scratch polishing. Specifically for ultra-hard third-generation semiconductor materials like SiC, an ultra-high pressure configuration is available, significantly enhancing processing capacity.

8" Single-Side Polishing Machine

This equipment is designed for a Φ576mm ceramic disc, performing polishing on wafers attached to it. It is suitable for various wafer substrate materials including 4-8 inch Si, SiC, GaAs, and Ge wafers. The system features four actively driven polishing heads, combined with innovative multi-zone pressure application, precise temperature control, and pressure control systems, enabling highly efficient, high-flatness, and low-scratch polishing. It also includes an automated loading/unloading robotic arm for fully automated processing. Specifically for ultra-hard third-generation semiconductor materials like SiC, an ultra-high pressure configuration is available, significantly enhancing processing capacity.

8" Single-Side Polishing Line

This polishing line is designed for a Φ576mm ceramic disc, performing polishing on wafers attached to it. It is suitable for various wafer substrate materials including 4-8 inch Si, SiC, GaAs, and Ge wafers. The entire line can be configured with three or more machines in series according to customer processes. Equipped with automated loading/unloading robotic arms, it enables fully automated inline rough and fine polishing of wafers. The line also offers compatibility options such as AGV and water channel configurations, and can be integrated with upstream and downstream equipment for full-line automation.