8/12-inch 4-head fully automatic final polishing equipment.

The equipment is suitable for fully automatic CMP processing of various 4-12 inch wafers, including Si/SiC/GaN/GaAs/Ge wafers. It employs a 4-head, 3-table design. Through innovative multi-zone pressure control technology, a closed-loop control system with nanometer-level precision, and an advanced polishing fluid delivery system, it enables highly efficient global planarization and ultra-low defect processing of wafer surfaces, meeting the stringent requirements of advanced processes for surface roughness and TTV.

8-inch 8-head fully automatic final polishing equipment.

The equipment is suitable for fully automatic CMP processing of various 4-12 inch wafers, including Si/SiC/GaN/GaAs/Ge wafers. It employs an 8-head, 3-table design. Through innovative multi-zone pressure control technology, a closed-loop control system with nanometer-level precision, and an advanced polishing fluid delivery system, it enables highly efficient global planarization and ultra-low defect processing of wafer surfaces, meeting the stringent requirements of advanced processes for surface roughness and TTV. Compared to the 4-head equipment, this model offers higher processing efficiency.

Fully automatic integrated final polishing and cleaning machine.

CMP equipment paired with a fully automatic cleaner enables integrated polishing and cleaning of wafers, achieving dry-in/dry-out operation. The tool complies with SEMI standards and is suitable for various 4-inch to 12-inch semiconductor wafer products. Configurations with either 4 heads or 8 heads are available.

8-inch single-spindle semi-automatic CMP equipment.

This equipment uses semi-automatic operation with manual loading, suitable for CMP of various 2-8 inch semiconductor wafers and irregularly shaped cut pieces. It features a compact structure, simple operation, rich functionality, and strong compatibility, making it suitable for applications such as universities, research institutes, and small-batch sample processing.