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Grinding Wheel Marks: The "Invisible Killer" of SiC Wafer Thinning Yield?

October 17,2025
Oct.17

2025

October 17,2025

60

60

Silicon carbide (SiC)—the semiconductor world’s “straight-A student”—has earned top billing in cutting-edge fields like electric vehicles and 5G thanks to its exceptional performance in high-voltage, high-temperature, and high-frequency applications. Yet, as the saying goes, “the greater the power, the more stubborn the temperament.” Its extreme hardness and brittleness make the process of thinning SiC wafers—akin to “slimming down”—as delicate as engraving poetry onto a diamond. The slightest tremor can leave an indelible flaw, the most notorious of which is the dreaded “grinding wheel mark.”

These marks are more than cosmetic blemishes—they’re latent “stress assassins,” like hairline cracks on fine porcelain or scratches on a vinyl record. Left unchecked, they can trigger wafer warpage, crack propagation, and ultimately lead to device performance degradation or outright failure. Therefore, effectively controlling—and ideally eliminating—grinding wheel marks is a critical technical barrier to improving SiC device yield, reliability, and cost efficiency.

A Micro-Engraving Art Requiring Perfect Harmony of “Platform, Tool, and Technique”

Achieving flawless SiC thinning demands seamless synergy among three core elements:

A rock-solid micro-engraving platform (equipment),

A razor-sharp, precision engraving tool (consumables),

And a masterful engraving technique (process).


Only through their perfect orchestration can we achieve a truly “flawless” wafer surface.


Equipment Dimension: Building an “Unshakable” Micro-Engraving Platform

In micro-engraving, platform stability is non-negotiable. Real-world challenges include:

Insufficient rigidity and chatter: Machining SiC is like sustained high-intensity combat. Without a robust mechanical structure, vibrations create rhythmic “waviness” on the surface.

Motion inaccuracies: Even minor spindle runout or uneven feed motion acts like a shaky penstroke—leaving unintended marks.

Reactive monitoring systems: Traditional equipment lacks real-time feedback, often detecting defects only after processing is complete—too late to correct.

Inadequate coolant penetration: High-speed grinding wheels generate an “air barrier” that blocks coolant. Without effective penetration, localized overheating can “burn” the SiC surface and cause wheel glazing or thermal damage.


Upgrade Strategies:
● Reinforce the frame with high-damping materials and optimized structural design.
● Enhance motion fidelity with ultra-precision spindles and servo systems.
● Integrate intelligent sensors for real-time process monitoring and early defect warning.
● Optimize cooling & filtration to ensure deep, consistent coolant delivery and chip removal.


Process Dimension: Mastering the “Balance of Force and Finesse”

With a stable platform in place, the next step is refining the technique—how to “strike the cut.”

Material removal occurs in two regimes:

Brute-force mode (brittle-mode removal): Excessive force causes micro-cracking and brittle fracture, leaving rough surfaces and subsurface damage—the root cause of most grinding marks.

Precision mode (ductile-mode removal): Gentle, controlled engagement allows SiC to flow plastically (like sticky rice cake), enabling smooth, mirror-like surfaces. This is the gold standard for eliminating marks.

Core Principle: Minimize the depth of cut per abrasive grain—smaller is better—to stay firmly in ductile-mode territory.

Parameter Balancing Act:
● Wheel speed: Higher speeds enable gentler cutting but generate more heat—requiring robust cooling.
● Feed rate & depth of cut: These directly determine the “bite size.” Too aggressive, and you instantly revert to brittle-mode removal. The key is finding the sweet spot between throughput and surface quality.

Advanced Techniques:
● Multi-stage thinning: Start with coarse wheels for rapid bulk removal (“the warrior”), then switch to fine-grain wheels for ductile-mode finishing (“the artisan”) to heal subsurface damage.
● Precision thermal management: Use specialized coolant-lubricant formulations or cryogenic air cooling to deliver targeted “thermal surgery” at the grinding zone.


Consumables Dimension: Forging a “Perpetually Sharp” Nano-Engraving Tool

The diamond grinding wheel is our engraving tool—its condition dictates success or failure.

Cutting edge (abrasive grains): Must balance sharpness and durability. Coarse grains cut fast but leave deep marks; fine grains yield smooth finishes but wear quickly.

Tool body (bond matrix): Holds the grains in place. Metal, resin, and ceramic bonds each have trade-offs: some are tough but lack self-sharpening ability; others are responsive but less durable. The goal is a “balanced master”—strong yet intelligent.

Maintenance (dressing & sharpening): Even the best wheel dulls over time. Regular dressing restores geometry; sharpening re-exposes fresh grains. Neglect leads to surface scratching or excessive heat generation.

Tool Evolution Path:
Develop advanced “porous” or “reactive” bond matrices for better grain retention and chip evacuation. Implement smart maintenance systems that auto-trigger dressing based on real-time wear data—keeping the tool perpetually at peak performance.


Synergistic Optimization: Where 1 + 1 + 1 > 3

Eliminating grinding wheel marks isn’t about isolated improvements—it’s a deeply integrated system of equipment, process, and consumables. Only through holistic co-optimization can manufacturers achieve high-yield, low-damage SiC thinning at scale.

SiJia Semiconductor’s high-precision thinning platform embodies this philosophy. Engineered with extreme rigidity to suppress vibration at the source, nanometer-level motion control for trajectory accuracy, and intelligent real-time monitoring for proactive defect prevention, our system delivers the ultimate “micro-engraving workstation”—empowering customers to overcome process bottlenecks and unlock the full potential of SiC technology.


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