Amid the wave of electric vehicles pursuing breakthroughs in range, a profound transformation is silently unfolding. Data shows that 21 mainstream OEMs have already launched mass-produced passenger vehicles equipped with SiC inverters, with their penetration rate rapidly climbing to over 15%. More remarkably, Xiaomi Motors, as an industry newcomer, has captured one-fourth of the entire SiC vehicle market with its SiC models, staging a classic case of "the latecomer surpassing the pioneer." This is not just a redistribution of market share, but also a declaration: the era of SiC has moved from early adoption to mainstream competition.
I. The Core of Efficiency: Why SiC?
The "heart" of traditional electric vehicles—the electric drive system—has long been dominated by silicon (Si)-based IGBTs (Insulated Gate Bipolar Transistors). However, silicon materials have approached their theoretical limits in physical properties. The rise of SiC stems from its overwhelming material advantages: its breakdown electric field strength is 10 times that of silicon, its thermal conductivity is over 3 times higher, and it can stably operate at temperatures of 200°C or even higher.
These characteristics translate into significant system-level benefits:
Lower losses: In main drive inverters, SiC MOSFETs reduce switching losses by 70%-80% compared to silicon-based IGBTs. This means less electrical energy wasted as heat, directly contributing to a 5%-10% improvement in driving range.
Higher frequency: SiC supports switching frequencies dozens of times higher than IGBTs, allowing for smaller, lighter passive components (inductors, capacitors), significantly increasing the power density of electric drive systems and helping optimize vehicle space and lightweight design.
Natural partner for high voltage: As 800V and even 1000V high-voltage platforms become standard for premium models, SiC's high-voltage tolerance becomes an irreplaceable choice. It not only makes peak charging power exceeding 400kW possible but also significantly reduces energy losses in high-voltage systems.
Market choices clearly reflect this trend. According to a report by Zoscar Research, sales of passenger vehicles with 800-1000V high-voltage architectures in China reached 739,000 units in 2024, with penetration expected to exceed 35% by 2030, reaching more than 10 times the 2024 sales volume. This massive wave of high-voltage vehicles is the core driving force behind the explosive demand for SiC.
II. The Game of Cutting-Edge Technology: Cost Reduction and Application Expansion
The SiC industry has crossed the "from 0 to 1" breakthrough phase and is now on the eve of "from 1 to N" explosion. The core proposition has shifted from "whether it works well" to "how to make it cheaper and more widely applicable."
1. Technological Iteration: Advancing into the Cost Core Zone
In the cost structure of SiC devices, substrates account for approximately 50% of the total cost. Therefore, reducing substrate costs is key to widespread adoption.
Wafer upsizing: The industry is rapidly transitioning from mainstream 6-inch wafers to 8-inch wafers. An 8-inch wafer has 1.83 times the usable area of a 6-inch wafer, nearly doubling the number of chips produced and significantly reducing unit costs. Companies like Infineon, Sanan Optoelectronics, and joint ventures with STMicroelectronics have already deployed large-scale production of 8-inch automotive-grade SiC chips. Even more advanced 12-inch wafer technology has been validated on pilot production lines.
Structural innovation: The evolution from planar gate to trench gate represents another path to cost reduction and efficiency improvement. Taking Infineon's latest Trench-Superjunction (TSJ) technology as an example, it reduces the on-resistance of SiC MOSFETs by 40% and increases current-carrying capacity by 25%, meaning smaller chips can be used for the same performance. ROHM Semiconductor's 4th generation dual-trench SiC MOSFET has already been applied in Schaeffler's mass-produced high-voltage "inverter bricks," supporting voltage platforms above 800V.
Challenges in substrate precision processing: However, reducing substrate costs depends not only on wafer size upgrades but also on capabilities throughout the complex processing chain from crystal ingot to substrate. Silicon carbide material is hard and brittle, with extremely high technical barriers in slicing, grinding, and polishing processes. Material loss during processing, surface damage, and final flatness (such as TTV values) directly determine substrate yield, reliability, and effective output. Siplus Semiconductor's focus on providing comprehensive precision processing and automation solutions across all processes aims to overcome this bottleneck and solidify the manufacturing foundation for large-scale SiC industry supply.
2. Application Penetration: From Main Drive to Full Vehicle
SiC applications are rapidly expanding from their initial use in main drive inverters (core loss reduction) to every link in the vehicle energy system, creating a "sparks igniting prairie fires" momentum:
On-Board Chargers (OBC) and DC-DC Converters: These components are extremely sensitive to efficiency and high-frequency characteristics, making them ideal battlegrounds for SiC and another third-generation semiconductor, Gallium Nitride (GaN). Some vehicle models plan to adopt GaN OBCs, achieving power density three times higher than traditional solutions.
Ultra-high voltage platform exploration: To pursue ultimate charging speed, the industry chain is already planning next-generation solutions. For example, BYD has launched automotive-grade 1500V SiC power chips, while Dongfeng Yipai plans to adopt 1700V SiC modules on platforms exceeding 1000V.
III. The Mirror of the Future: Envisioning the "Full-Vehicle SiC" Ecosystem
If SiC device costs continue to decline due to technological maturity and economies of scale, we may witness the ultimate vision of a "full-vehicle SiC" ecosystem. This is not just component replacement but a systematic transformation from vehicle architecture to user experience.
Of course, realizing this vision still requires overcoming numerous challenges: besides continuous cost control, these include ensuring extremely high automotive-grade reliability, high-voltage system safety, and comprehensive upgrades to vehicle electrical architectures adapting to 800V/1000V platforms.
IV. Conclusion
The journey of SiC in electric vehicles is an evolution from "performance enhancement" to "architecture definition." From Xiaomi Motors' rapid rise to 800V platforms becoming premium standards, to the industry chain's dedicated development in 8-inch wafers, trench technology, and substrate precision processing equipment—all evidence the irreversible nature of this trend.
It is not just a "power-saving miracle" for extending range but the key to future electric vehicles featuring ultra-fast charging, high integration, and long lifespan. As China plays an increasingly central role in both the new energy vehicle market and SiC supply chains, this silicon carbide-driven electrical efficiency revolution will not only determine the next phase of competitive advantage in electric vehicles but may also see Chinese enterprises writing crucial chapters. When energy conversion losses are minimized to the extreme, the true potential of electric vehicles will finally begin to emerge.